发明名称 METHOD FOR PRODUCING THICK FILM PHOTORESIST PATTERN
摘要 A method for producing a thick film photoresist pattern including laminating a thick photoresist layer including a chemically amplified positive-type photoresist composition for thick film on a support; irradiating the thick photoresist layer; and developing the thick photoresist layer to obtain a thick film resist pattern; in which the composition includes an acid generator, a resin whose alkali solubility increases by the action of an acid, and an organic solvent having a boiling point of at least 150° C. and a contact angle on a silicon substrate of no greater than 18°, in an amount of at least 40% by mass with respect to total mass of the organic solvent.
申请公布号 US2013171572(A1) 申请公布日期 2013.07.04
申请号 US201213708081 申请日期 2012.12.07
申请人 TOKYO OHKA KOGYO CO., LTD.;TOKYO OHKA KOGYO CO., LTD. 发明人 WASHIO YASUSHI;ANDO TOMOYUKI;SHIMURA EIICHI;TACHI TOSHIAKI
分类号 G03F7/20 主分类号 G03F7/20
代理机构 代理人
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