发明名称 |
METHOD FOR PRODUCING THICK FILM PHOTORESIST PATTERN |
摘要 |
A method for producing a thick film photoresist pattern including laminating a thick photoresist layer including a chemically amplified positive-type photoresist composition for thick film on a support; irradiating the thick photoresist layer; and developing the thick photoresist layer to obtain a thick film resist pattern; in which the composition includes an acid generator, a resin whose alkali solubility increases by the action of an acid, and an organic solvent having a boiling point of at least 150° C. and a contact angle on a silicon substrate of no greater than 18°, in an amount of at least 40% by mass with respect to total mass of the organic solvent.
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申请公布号 |
US2013171572(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201213708081 |
申请日期 |
2012.12.07 |
申请人 |
TOKYO OHKA KOGYO CO., LTD.;TOKYO OHKA KOGYO CO., LTD. |
发明人 |
WASHIO YASUSHI;ANDO TOMOYUKI;SHIMURA EIICHI;TACHI TOSHIAKI |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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