METHOD FOR MANUFACTURING SINGLE-CRYSTAL SILICON

摘要

Subject: There is provided a method for manufacturing single- crystal silicon that makes it possible to reduce occurrence of dislocation of the single-crystal silicon when the single- crystal silicon is grown using a multi-pulling method for pulling up a plurality of pieces of single-crystal silicon from a material melt in an identical crucible. Solving Means: A method for manufacturing single-crystal silicon is directed to a method for manufacturing a single- crystal silicon 1 using the multi-pulling method for pulling up a plurality of pieces of single-crystal silicon 1 from a material melt 7 in an identical crucible 8 within a chamber by a Czochralski method, the method including the step of growing single-crystal silicon 1 in a magnetic field, wherein an amount of addition of barium formed on an inner wall of large-diameter crucible 8 is controlled within a certain range.