ETCHING-SOLUTION COMPOSITION AND WET ETCHING METHOD USING SAME

摘要

The present invention relates to an etching-solution composition, and the etching-solution composition according to one embodiment of the present invention comprises 3-20 weight% hydrofluoric acid, 5-40 weight% nitric acid, 10-60 weight% acetic acid, and 2-20 weight% a catalyst, with the remainder being water. The catalyst can comprise a mixture of at least one selected from an ammonium compound and a sulfonic acid compound.