ION BEAM PROCESSING DEVICE AND NEUTRALIZER

摘要

The invention provides an ion beam processing device and a neutralizer that are capable of reducing a fall of a deposit that has accumulated on an anode of the neutralizer due to sputtering of a cathode of the neutralizer caused by plasma generated in the neutralizer, said fall being from the anode. The ion beam processing device of one embodiment of the invention is provided with: a structure that irradiates the interior of a processing chamber with an ion beam generated in a plasma generation chamber; and a neutralizer that discharges electrons. The neutralizer is characterized by comprising the cathode, the anode, a voltage application means, and a gas supply section, and the anode and the cathode being formed from materials that have the same thermal expansion ratio. The cathode has mutually facing portions, and the plasma is generated in a space between the mutually facing portions. The anode has an opening for extracting electrons from the plasma formed in the space. The voltage application means is a means for applying a positive voltage to the anode and extracting electrons from the plasma, and applying a voltage that is negative relative to the positive voltage to the cathode and generating the plasma. The gas supply section is a section for supplying discharge gas to the space.