| 摘要 |
PURPOSE: A deposition apparatus and a deposition method are provided to manufacture an SiC epitaxial wafer with high quality by expanding a diffusion path of an SiHClx based intermediate compound in a chamber or a susceptor. CONSTITUTION: A chamber (210) includes a gas inlet and a gas outlet. A susceptor (220) is arranged in the chamber and receives a wafer. A first reactive gas supply line (310) and a second reactive gas supply line (320) supply reactive gases to the chamber. A distance between the first reactive gas supply line and the wafer is longer than a distance between the second reactive gas supply line and the wafer. The second reactive gas supply line supplies SiHClx gases to the chamber.
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