| 摘要 |
PURPOSE: A chemical vapor deposition apparatus is provided to prevent particles from being inputted from a process chamber to a through hole by installing an inflow preventing unit between a susceptor and an inner wall of the process chamber. CONSTITUTION: A susceptor (120) supports a substrate in a process chamber (110). A support shaft (140) passes through the process chamber and supports the susceptor. An inflow preventing unit (160) is installed between an inner wall of the process chamber and the susceptor. The inflow preventing unit includes an inflow preventing plate (161) and an inflow preventing protrusion (162). A magnetic fluid seal (150) seals a space between the support shaft and a sidewall support plate (123).
|
