| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor substrate which can improve a yield of a semiconductor device.SOLUTION: This semiconductor substrate 10 has a main surface 1 and comprises single crystal silicon carbide. The main surface 1 includes a central region 3 which is a region excluding the region within 5 mm from the outer periphery 2. When the central region 3 is divided into square regions 4 with a side of 1 mm, Burgers vector is parallel to <11-20> direction, a dislocation line is in the basal surface, and density of dislocation where the dislocation line is exposed on the main surface 1 of the semiconductor substrate 10 is ≤1×10cmin any square region 4. |
