ZINC OXIDE PRECURSOR AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME

摘要

A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains a zincocene having the following formula or a derivative thereof: where R1 and R2 are hydrogen or CnH2n+1. The n is a number selected from 1 to 3, and the R1 and R2 is one selected from the group consisting of hydrogen, a methyl group, an ethyl group and an i-propyl group. A method of depositing a zinc oxide-based thin film includes the following steps of: loading a substrate into a deposition chamber; and supplying the above-described zinc oxide precursor and an oxidizer into the deposition chamber and forming a zinc oxide-based thin film on the substrate via chemical vapor deposition. In an exemplary embodiment, the zinc oxide-based thin film may be formed on the substrate via atmospheric pressure chemical vapor deposition.