SEMICONDUCTOR DEVICE INCLUDING TRANSISTORS

摘要

PURPOSE: A semiconductor device including a transistor is provided to minimize the deviation of a source/drain region and to improve throughput. CONSTITUTION: A substrate (110C) has a channel region (160A,160B) and a pair of recesses (140A). The pair of recesses is located at both sides of the channel region. A gate insulating layer (122A,122B) is formed on the channel region. A gate electrode is formed on the gate insulating layer. A pair of source/drain regions (150A,150B) is formed on the bottom surface of the pair of recesses.