METHOD FOR FABRICATING GaN FILM AND SUBSTRATE FOR FABRICATING GaN FILM

摘要

PURPOSE: A method for manufacturing gallium nitride and a gallium nitride film board are provided to prevent cracks on a nitride film due to changed material property. CONSTITUTION: A method for manufacturing gallium nitride comprises the following steps. From the inside of a board, a gallium nitride(GaN) atom and an atom of the board are mixed to form a mixture layer(S110). Gallium nitride is grown on the board(S120). [Reference numerals] (S110) Forming a mixed layer in a substrate; (S120) Growing gallium nitride on the substrate;