| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor substrate which can improve a yield of a semiconductor device.SOLUTION: This semiconductor substrate 10 has a main surface 1 and comprises single crystal silicon carbide. The main surface 1 includes a central region 3 which is a region excluding the region within 5 mm from the outer periphery 2. When the central region 3 is divided into square regions 4 with a side of 1 mm, density of dislocation, where Burgers vector is parallel to <0001> direction, is ≤1×10cmin any square region 4. |
