| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a silicon carbide substrate and a p-type collector layer, and which can be easily manufactured.SOLUTION: A semiconductor device comprises: a silicon carbide substrate 30 including an n-type drift layer 32 having a first surface S1 and a second surface S2 which are opposed to each other, a p-type body region 33 provided on the first surface S1 of the n-type drift layer 32, and an n-type emitter region 34 provided on the p-type body region 33 so as to be isolated from the n-type drift layer 32 by the p-type body region 33; a gate insulation film 11 formed on the p-type body region 33 so as to link the n-type drift layer 32 and the n-type emitter region 34; and a p-type Si collector layer 70 provided directly on the silicon carbide substrate 30 so as to face the second surface S2 of the n-type drift layer 32. |
