发明名称 |
TRENCH SILICIDE CONTACT WITH LOW INTERFACE RESISTANCE |
摘要 |
An electrical structure is provided that includes a dielectric layer present on a semiconductor substrate and a via opening present through the dielectric layer. An interconnect is present within the via opening. A metal semiconductor alloy contact is present in the semiconductor substrate. The metal semiconductor alloy contact has a perimeter defined by a convex curvature relative to a centerline of the via opening. The endpoints for the convex curvature that defines the metal semiconductor alloy contact are aligned to an interface between a sidewall of the via opening, a sidewall of the interconnect and an upper surface of the semiconductor substrate.
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申请公布号 |
US2013171795(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201313772954 |
申请日期 |
2013.02.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PEI CHENGWEN;JOHNSON JEFFREY B.;LI ZHENGWEN;YU JIAN |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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