发明名称 |
Annealing Methods for Backside Illumination Image Sensor Chips |
摘要 |
A method includes performing a grinding on a backside of a semiconductor substrate. An image sensor is disposed on a front side of the semiconductor substrate. An impurity is doped into a surface layer of the backside of the semiconductor substrate to form a doped layer. A multi-cycle laser anneal is performed on the doped layer.
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申请公布号 |
US2013171766(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201213477897 |
申请日期 |
2012.05.22 |
申请人 |
LIN YU-TING;SUNG CHENG-JUNG;WANG YU-SHENG;JANGJIAN SHIU-KO;YOU WEI-MING;JENG CHIH-CHERNG;SU CHING-HWANQ;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN YU-TING;SUNG CHENG-JUNG;WANG YU-SHENG;JANGJIAN SHIU-KO;YOU WEI-MING;JENG CHIH-CHERNG;SU CHING-HWANQ |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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