发明名称 |
BACK CONTACT TO FILM SILICON ON METAL FOR PHOTOVOLTAIC CELLS |
摘要 |
A crystal oriented metal back contact for solar cells is disclosed herein. In one embodiment, a photovoltaic device and methods for making the photovoltaic device are disclosed. The photovoltaic device includes a metal substrate with a crystalline orientation and a heteroepitaxial crystal silicon layer having the same crystal orientation of the metal substrate. A heteroepitaxial buffer layer having the crystal orientation of the metal substrate is positioned between the substrate and the crystal silicon layer to reduce diffusion of metal from the metal foil into the crystal silicon layer and provide chemical compatibility with the heteroepitaxial crystal silicon layer. Additionally, the buffer layer includes one or more electrically conductive pathways to electrically couple the crystal silicon layer and the metal substrate.
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申请公布号 |
US2013168684(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201313777974 |
申请日期 |
2013.02.26 |
申请人 |
ALLIANCE FOR SUSTAINABLE ENERGY, LLC;ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
发明人 |
BRANZ HOWARD M.;TEPLIN CHARLES W.;STRADINS PAULS;HEATHERLY LEE;PARANTHAMAN MARIAPPAN PARANS |
分类号 |
H01L31/0224;H01L31/0368;H01L31/18 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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