| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element and a nitride semiconductor light-emitting element manufacturing method, which can reduce manufacturing cost, and manufacture a nitride semiconductor light-emitting element having a low drive voltage and high luminous efficiency.SOLUTION: The nitride semiconductor light-emitting element comprises an n-type nitride semiconductor layer having a step-like structure including a principal surface and lateral faces of the n-type nitride semiconductor layer at a peripheral edge; and an n-side electrode arranged so as to directly cover the principal surface and the lateral face of the n-type nitride semiconductor layer. |
