发明名称 |
HIGH-VOLTAGE OXIDE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A high-voltage oxide transistor includes a substrate; a channel layer disposed on the substrate; a gate electrode disposed on the substrate to correspond to the channel layer; a source contacting a first side of the channel layer; and a drain contacting a second side of the channel layer, wherein the channel layer includes a plurality of oxide layers, and none of the plurality of oxide layers include silicon. The gate electrode may be disposed on or under the channel layer. Otherwise, the gate electrodes may be disposed respectively on and under the channel layer.
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申请公布号 |
US2013168770(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201213547200 |
申请日期 |
2012.07.12 |
申请人 |
JEON SANG-HUN;KIM CHANG-JUNG;SONG I-HUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON SANG-HUN;KIM CHANG-JUNG;SONG I-HUN |
分类号 |
H01L29/772;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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