发明名称 |
CMOS HAVING A SIC/SIGE ALLOY STACK |
摘要 |
A delta doping of silicon by carbon is provided on silicon surfaces by depositing a silicon carbon alloy layer on silicon surfaces, which can be horizontal surfaces of a bulk silicon substrate, horizontal surfaces of a top silicon layer of a semiconductor-on-insulator substrate, or vertical surfaces of silicon fins. A p-type field effect transistor (PFET) region and an n-type field effect transistor (NFET) region can be differentiated by selectively depositing a silicon germanium alloy layer in the PFET region, and not in the NFET region. The silicon germanium alloy layer in the PFET region can overlie or underlie a silicon carbon alloy layer. A common material stack can be employed for gate dielectrics and gate electrodes for a PFET and an NFET. Each channel of the PFET and the NFET includes a silicon carbon alloy layer, and is differentiated by the presence or absence of a silicon germanium layer.
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申请公布号 |
US2013168695(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201213343472 |
申请日期 |
2012.01.04 |
申请人 |
CHIDAMBARRAO DURESETI;GREENE BRIAN J.;LIANG YUE;YU XIAOJUN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIDAMBARRAO DURESETI;GREENE BRIAN J.;LIANG YUE;YU XIAOJUN |
分类号 |
H01L27/092;H01L21/8238;H01L29/12 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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