发明名称 PHOTOSENSITIVE RESIN COMPOSITION AND PROCESS FOR PRODUCING SEMICONDUCTOR ELEMENT
摘要 A photosensitive resin composition which exhibits positive or negative photosensitibility and which is to be used in an ion implantation step as the mask, containing a polysiloxane (A) as the resin. This photosensitive resin composition has high heat resistance, enables the control of pattern shape, and exhibits excellent mask performance against ion implantation, thus being applicable to a less costly high-temperature ion implantation process.
申请公布号 WO2013099785(A1) 申请公布日期 2013.07.04
申请号 WO2012JP83186 申请日期 2012.12.21
申请人 TORAY INDUSTRIES, INC. 发明人 FUJIWARA, TAKENORI;TANIGAKI, YUGO;SUWA, MITSUHITO
分类号 G03F7/075;G03F7/004;G03F7/023;G03F7/038;G03F7/09 主分类号 G03F7/075
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