| 摘要 |
<p>The primary objective of the present invention is, in an inductive-coupling plasma processing device, to suppress plasma potential to a low level by reducing the effective inductance of an antenna, and to enable the generation of plasma having favorable uniformity in the plasma density distribution in two dimensions and across a larger area. In the present invention, an antenna (30), of which the planar shape is straight, is configured from round trip conductors (31, 32) through which a high-frequency current (IR) flows in mutually opposite directions and that are disposed approaching each other in the vertical direction (Z). The gap (D) in the vertical direction (Z) of the round trip conductors (31, 32) is caused to be less in the central portion in the lengthwise direction (X) of the antenna and caused to be greater at both ends. A plurality of such antennas (30) are disposed in parallel. The length (N) of the region (A2) at which the gap (D) is less at the central portion of each antenna is caused to be greater at the central portion in the direction (Y) of parallel disposition, and caused to be less at both ends.</p> |
