DAMAGE MONITOR STRUCTURE FOR THROUGH-SILICON VIA (TSV) ARRAYS

摘要

Described herein are techniques related to techniques for monitoring damage to circuitry or structure neighboring one or more through-silicon vias (TSVs) caused by TSV-related processing. Additionally, techniques for confining diffusion of moisture or chemical from one or more TSVs during TSV-related processing are also described. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.