| 摘要 |
<p>A lateral double diffused metal oxide semiconductor field effect transistor (LDMOS) (20) is provided. The LDMOS (20) comprises a source region (210), a gate dielectric layer (230), a drain region (270), a drift region (250) arranged between the drain region (270) and the gate dielectric layer (230), a field oxide layer (260) arranged on the drift region (250) and a gate electrode (240) arranged on the gate dielectric layer (230) substantially, wherein a field region auxiliary electrode (280) is arranged on the portion of the field oxide layer (260) relatively close to the drain region (270), and the field region auxiliary electrode (280) is biased a voltage in the same direction of the voltage biased to the drain region (270) in on state. The LDMOS (20) has the characteristics of a high breakdown voltage in on state and a high operating voltage.</p> |
