| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion element offering a high short circuit current density and capable of being manufactured at low cost.SOLUTION: The photoelectric conversion element includes a translucent substrate, a photoelectric conversion layer provided on the translucent substrate, a collector electrode provided on at least a portion of the photoelectric conversion layer, a counter electrode conductive layer facing the translucent substrate, a catalyst layer provided on the translucent substrate-side surface of the counter electrode conductive layer, and a carrier transport material provided between the translucent substrate and the catalyst layer. The photoelectric conversion layer contains a first porous semiconductor layer provided on the translucent substrate, a second porous semiconductor layer provided on the first porous semiconductor layer, and a photosensitizer adsorbed in the first porous semiconductor layer and the second porous semiconductor layer. The porosity of the first porous semiconductor layer is higher than the porosity of the second porous semiconductor layer. |
