| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device having a transistor using an oxide semiconductor.SOLUTION: By performing oxygen doping treatment on a gate insulation layer and/or an interlayer insulation layer which is an insulation layer contacting an oxide semiconductor layer, a region containing an excess of oxygen than a stoichiometric composition ratio is formed. The insulation layer contacting the oxide semiconductor layer and having the oxygen excess region is the insulation layer containing nitrogen as a composition. Because the insulation layer contacting the oxide semiconductor layer has the oxygen excess region, desorption of oxygen from the oxide semiconductor layer is inhibited and oxygen deficiency in the film is reduced. Further, by performing the oxygen doping treatment on the insulation layer containing nitrogen as the component, nitrogen contained in the film binds with the introduced oxygen thereby to achieve an effect of trapping the introduced oxygen in the film. |
