| 摘要 |
PROBLEM TO BE SOLVED: To provide an excellent nonvolatile storage device having advantage for miniaturization, small initial threshold value variance and high write efficiency, with no erasure failure and no storage failure.SOLUTION: A nonvolatile storage device comprises a laminated film, which is arranged to extend from between a semiconductor substrate and a gate electrode to over at least a surface on a side of a first impurity diffusion region on the gate electrode, and is provided with a charge accumulating layer and a tunnel insulating film in this order from the gate electrode side. |
