发明名称 |
SYSTEM FOR SPLITTING OF BRITTLE MATERIALS WITH TRENCHING TECHNOLOGY |
摘要 |
One aspect related to a system configured to split a processed semiconductor wafer. The semiconductor wafer comprises a brittle material and has at least one layer formed on a first surface of the semiconductor wafer. At least one trench is etched in the first surface and through the at least one layer thereby forming a line on the surface where at least some of the brittle material is removed. Provided are means for splitting the semiconductor wafer into separate pieces along the line.
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申请公布号 |
US2013168019(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201313782805 |
申请日期 |
2013.03.01 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HORSFIELD NICHOLAS |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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