发明名称 SYSTEM FOR SPLITTING OF BRITTLE MATERIALS WITH TRENCHING TECHNOLOGY
摘要 One aspect related to a system configured to split a processed semiconductor wafer. The semiconductor wafer comprises a brittle material and has at least one layer formed on a first surface of the semiconductor wafer. At least one trench is etched in the first surface and through the at least one layer thereby forming a line on the surface where at least some of the brittle material is removed. Provided are means for splitting the semiconductor wafer into separate pieces along the line.
申请公布号 US2013168019(A1) 申请公布日期 2013.07.04
申请号 US201313782805 申请日期 2013.03.01
申请人 INFINEON TECHNOLOGIES AUSTRIA AG;INFINEON TECHNOLOGIES AUSTRIA AG 发明人 HORSFIELD NICHOLAS
分类号 H01L21/02 主分类号 H01L21/02
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