发明名称 |
METHODS OF FABRICATING TRENCH GENERATED DEVICE STRUCTURES |
摘要 |
Methods for fabricating device structures, such as bipolar transistors and diodes. The method includes forming a trench extending through stacked semiconductor and insulator layers and into an underlying semiconductor substrate. The trench may be at least partially filled with a sacrificial plug containing a dopant with a conductivity type opposite to the conductivity type of the semiconductor substrate. Dopant is transported outwardly from the sacrificial plug into the semiconductor substrate surrounding the trench to define a doped region of the second conductivity type in the semiconductor substrate. A first contact is formed that extends through the semiconductor and insulator layers to a portion of the semiconductor substrate outside of the doped region. A second contact is formed that extends through the semiconductor and insulator layers to the doped region.
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申请公布号 |
US2013171796(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201313764355 |
申请日期 |
2013.02.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;NOWAK EDWARD J. |
分类号 |
H01L21/225 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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