发明名称 |
LOCALIZED SURFACE PLASMON RESONANCE SENSOR USING CHALCOGENIDE MATERIALS AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film.
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申请公布号 |
US2013168789(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201213723555 |
申请日期 |
2012.12.21 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY;KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
LEE TAEK SUNG;LEE KYEONG SEOK;KIM IN HO;LEE WOOK SEONG;JEONG DOO SEOK;KIM WON MOK;CHEONG BYUNG KI |
分类号 |
H01L31/032;H01L31/18 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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