发明名称 APPARATUS AND METHOD FOR IMPROVING POWER DELIVERY IN A MEMORY, SUCH AS, A RANDOM ACCESS MEMORY
摘要 Embodiments of an apparatus and method to improve power delivery including a pre-charge circuit that may include a first voltage supply rail configured to provide a first voltage amount to perform a first phase of a pre-charge of a bit line and a second voltage supply rail configured to provide a second voltage amount to perform a second phase of the pre-charge of the bit line are described herein. In embodiments, the pre-charge circuit may be a pre charge circuit for a static random-access memory (SRAM) memory cell.
申请公布号 WO2013100982(A1) 申请公布日期 2013.07.04
申请号 WO2011US67631 申请日期 2011.12.28
申请人 INTEL CORPORATION;TAUFIQUE, MOHAMMED H.;CUMMINGS, DANIEL J.;NGO, HIEU T.;GANGULY, SHANTANU 发明人 TAUFIQUE, MOHAMMED H.;CUMMINGS, DANIEL J.;NGO, HIEU T.;GANGULY, SHANTANU
分类号 G11C7/12;G11C5/14;G11C11/413 主分类号 G11C7/12
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