APPARATUS AND METHOD FOR IMPROVING POWER DELIVERY IN A MEMORY, SUCH AS, A RANDOM ACCESS MEMORY
摘要
Embodiments of an apparatus and method to improve power delivery including a pre-charge circuit that may include a first voltage supply rail configured to provide a first voltage amount to perform a first phase of a pre-charge of a bit line and a second voltage supply rail configured to provide a second voltage amount to perform a second phase of the pre-charge of the bit line are described herein. In embodiments, the pre-charge circuit may be a pre charge circuit for a static random-access memory (SRAM) memory cell.
申请公布号
WO2013100982(A1)
申请公布日期
2013.07.04
申请号
WO2011US67631
申请日期
2011.12.28
申请人
INTEL CORPORATION;TAUFIQUE, MOHAMMED H.;CUMMINGS, DANIEL J.;NGO, HIEU T.;GANGULY, SHANTANU
发明人
TAUFIQUE, MOHAMMED H.;CUMMINGS, DANIEL J.;NGO, HIEU T.;GANGULY, SHANTANU