发明名称 |
PRODUCTION METHOD OF ZEOLITE FILM IN WHICH ONE AXIS IS COMPLETELY VERTICALLY ORIENTED, USING STEAM UNDER SYNTHETIC GEL-FREE CONDITION |
摘要 |
<p>Provided are a method for preparing a thin film or a thick film, comprising: a first step of providing a porous substrate capable of supplying silicon; a second step of applying zeolite seed crystals onto the surface of the porous substrate; a third step of coating the seed crystals-applied porous substrate with an aqueous solution containing a structure directing agent; and a fourth step of forming and growing a film from the seed crystals using a secondary growth method above a temperature at which moisture inside the seed crystals-applied porous substrate prepared in the third step can form steam, and a film prepared by the method. According to the present invention, the preparation method of a film comprises simple manufacturing processes, and thus has high reproducibility and high throughput. Since a synthetic gel is not used and a solution is used, it is possible to reduce the unnecessary consumption of materials, environmental pollution is decreased, a synthetic gel is not wasted, and drying and washing a film is unnecessary.</p> |
申请公布号 |
WO2013100734(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
WO2012KR11807 |
申请日期 |
2012.12.28 |
申请人 |
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION SOGANGUNIVERSITY |
发明人 |
YOON, KYUNG BYUNG;PHAM, CAO THAN TUNG |
分类号 |
C01B39/38;B32B18/00;C01B39/02;H01L21/31 |
主分类号 |
C01B39/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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