发明名称 PRODUCTION METHOD OF ZEOLITE FILM IN WHICH ONE AXIS IS COMPLETELY VERTICALLY ORIENTED, USING STEAM UNDER SYNTHETIC GEL-FREE CONDITION
摘要 <p>Provided are a method for preparing a thin film or a thick film, comprising: a first step of providing a porous substrate capable of supplying silicon; a second step of applying zeolite seed crystals onto the surface of the porous substrate; a third step of coating the seed crystals-applied porous substrate with an aqueous solution containing a structure directing agent; and a fourth step of forming and growing a film from the seed crystals using a secondary growth method above a temperature at which moisture inside the seed crystals-applied porous substrate prepared in the third step can form steam, and a film prepared by the method. According to the present invention, the preparation method of a film comprises simple manufacturing processes, and thus has high reproducibility and high throughput. Since a synthetic gel is not used and a solution is used, it is possible to reduce the unnecessary consumption of materials, environmental pollution is decreased, a synthetic gel is not wasted, and drying and washing a film is unnecessary.</p>
申请公布号 WO2013100734(A1) 申请公布日期 2013.07.04
申请号 WO2012KR11807 申请日期 2012.12.28
申请人 INDUSTRY-UNIVERSITY COOPERATION FOUNDATION SOGANGUNIVERSITY 发明人 YOON, KYUNG BYUNG;PHAM, CAO THAN TUNG
分类号 C01B39/38;B32B18/00;C01B39/02;H01L21/31 主分类号 C01B39/38
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