| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of speeding up a signal and to provide a method of manufacturing the same.SOLUTION: A semiconductor device includes: a carrier travel layer 3 provided above a substrate 1; carrier supply layers 4, 5, and 6 provided on and above the carrier travel layer 3; an etching stopper layer 7 provided above and on the carrier supply layers 4, 5, and 6 and connected to a gate electrode 11; a cap layer 9 provided above the etching stopper layer 7, connected to each of a source electrode 12 and a drain electrode 13, and having lower conduction-band energy than the etching stopper layer 7; and Si delta doping 8 provided between the cap layer 9 and the etching stopper layer 7. |
