发明名称 FLASH MEMORY DEVICE WITH MULTI-LEVEL CELLS AND METHOD OF WRITING DATA THEREIN
摘要 In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
申请公布号 US2013173857(A1) 申请公布日期 2013.07.04
申请号 US201313777816 申请日期 2013.02.26
申请人 CHEON WON-MOON;KIM SEON-TAEK;PARK CHAN-IK;CHOI SUNG-UP 发明人 CHEON WON-MOON;KIM SEON-TAEK;PARK CHAN-IK;CHOI SUNG-UP
分类号 G06F12/02 主分类号 G06F12/02
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