发明名称 |
FLASH MEMORY DEVICE WITH MULTI-LEVEL CELLS AND METHOD OF WRITING DATA THEREIN |
摘要 |
In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.
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申请公布号 |
US2013173857(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201313777816 |
申请日期 |
2013.02.26 |
申请人 |
CHEON WON-MOON;KIM SEON-TAEK;PARK CHAN-IK;CHOI SUNG-UP |
发明人 |
CHEON WON-MOON;KIM SEON-TAEK;PARK CHAN-IK;CHOI SUNG-UP |
分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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