发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME |
摘要 |
A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n+-type source layer that is in ohmic contact with the source electrode, a p-type GaN barrier layer, and a p+-type GaN-based supplementary layer located between the p-type GaN barrier layer and the n+-type source layer. The p+-type GaN-based supplementary layer and the n+-type source layer form a tunnel junction to fix the electric potential of the p-type GaN barrier layer at a source potential.
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申请公布号 |
US2013168739(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201113824248 |
申请日期 |
2011.07.06 |
申请人 |
KIYAMA MAKOTO;SAITOH YU;OKADA MASAYA;UENO MASAKI;YAEGASHI SEIJI;INOUE KAZUTAKA;YOKOYAMA MITSUNORI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KIYAMA MAKOTO;SAITOH YU;OKADA MASAYA;UENO MASAKI;YAEGASHI SEIJI;INOUE KAZUTAKA;YOKOYAMA MITSUNORI |
分类号 |
H01L29/778;H01L29/66 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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