SOI STRUCTURES HAVING A SACRIFICIAL OXIDE LAYER,申请号US201313762967-传众专利搜索

发明名称	SOI STRUCTURES HAVING A SACRIFICIAL OXIDE LAYER
摘要	Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.
申请公布号	US2013168836(A1)	申请公布日期	2013.07.04
申请号	US201313762967	申请日期	2013.02.08
申请人	MEMC ELECTRONIC MATERIALS, INC.;MEMC ELECTRONIC MATERIALS, INC.	发明人	GRABBE ALEXIS;FLANNERY LARRY
分类号	H01L29/06	主分类号	H01L29/06
代理机构		代理人
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