发明名称 LASER BEAM MACHINING METHOD AND SEMICONDUCTOR CHIP
摘要 An object to be processed 1 comprising a substrate 4 and a plurality of functional devices 15 formed on a front face 3 of the substrate 4 is irradiated with laser light L while locating a converging point P within the substrate 4, so as to form at least one row of a divided modified region 72, at least one row of a quality modified region 71 positioned between the divided modified region 72 and the front face 3 of the substrate 4, and at least one row of an HC modified region 73 positioned between the divided modified region 72 and a rear face 21 of the substrate 4 for one line to cut 5. Here, in a direction along the line to cut, a forming density of the divided modified region 72 is made lower than that of the quality modified region 71 and that of the HC modified region 73.
申请公布号 US2013168831(A1) 申请公布日期 2013.07.04
申请号 US201313757111 申请日期 2013.02.01
申请人 HAMAMATSU PHOTONICS K.K.;HAMAMATSU PHOTONICS K.K. 发明人 SAKAMOTO TAKESHI;MURAMATSU KENICHI
分类号 H01L23/544 主分类号 H01L23/544
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