METHODS FOR FORMING FIELD EFFECT TRANSISTOR DEVICES WITH PROTECTIVE SPACERS

摘要

A field effect transistor device prepared by a process including forming a first gate stack and a second gate stack on a substrate and depositing a first photoresist material over the second gate stack and a portion of the substrate. The process also includes implanting ions in exposed regions of the substrate to define a first source region and a first drain region adjacent to the first gate stack and depositing a first protective layer over the first source region, the first gate stack, the first drain region, and the first photoresist material. The process further includes removing portions of the first protective layer to expose the first photoresist material and to define a first spacer disposed on a portion of the first source region and a portion of the first drain region and removing the first photoresist material.