发明名称 |
METHOD FOR FORMING THIN FILM AND CVD APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film forming method that can stably form a thin film on a substrate by a simple configuration, and to provide a CVD apparatus.SOLUTION: The CVD apparatus includes: a vaporizer 17 for evaporating raw material solution; and a raw material gas jetting part 41 for jetting raw material gas evaporated by the vaporizer 17 toward a tape-like substrate T. The CVD apparatus is provided with: a plurality of the vaporizers 17, wherein at least two of the vaporizers 17 are filled with one or more raw material solution containing the same element; a raw material gas mixing part 50 for mixing the raw material gas jetting from the plurality of vaporizers 17; and a raw material gas introduction unit 55 for guiding the raw material gas mixed in the raw material gas mixing part 50 to the raw material gas jetting port 41a of the raw material jetting part 41. |
申请公布号 |
JP2013129872(A) |
申请公布日期 |
2013.07.04 |
申请号 |
JP20110279537 |
申请日期 |
2011.12.21 |
申请人 |
FURUKAWA ELECTRIC CO LTD:THE |
发明人 |
NAKASAKI RYUSUKE;IKEDA MASAKIYO;YASUNAGA SHINYA;KIKUCHI KOJI;SAKURAI NORIYOSHI;RYU TSUYOSHI |
分类号 |
C23C16/448 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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