发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which facilitates via formation, and a manufacturing method therefor.SOLUTION: According to an embodiment, a semiconductor device comprises: a lower layer connection target; a laminate including a plurality of insulating layers and a plurality of electrode layers alternately laminated with each other on the lower layer connection target; an insulating film, and a via. The laminate has a staircase structure portion in which the plurality of electrode layers are processed stepwise. The insulating film is provided on a side wall of the via hole penetrating the staircase structure portion and reaching the lower layer connection target. The via connects an uppermost electrode layer and the lower layer connection target in each stage of the staircase structure portion through the via hole. The via also has an upper part provided on an upper surface of the uppermost electrode layer in a state in which it is in contact with the upper surface, and a penetration portion which is provided narrower than the upper surface inside the insulating film in the via hole and connects the upper part and the lower layer connection target.
申请公布号 JP2013131580(A) 申请公布日期 2013.07.04
申请号 JP20110278991 申请日期 2011.12.20
申请人 TOSHIBA CORP 发明人 NANSEI HIROYUKI
分类号 H01L21/8247;H01L21/336;H01L21/768;H01L23/522;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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