| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that is advantageous for microfabrication and high capacity.SOLUTION: The semiconductor memory device includes: a first gate insulating film 11 provided on a front surface of a semiconductor body 10; a first gate 12 provided on the first gate insulating film; a second gate 14 provided on a rear surface of the semiconductor body so as to cross the first gate; and a source drain provided spaced apart from each other in the semiconductor body so as to sandwich the first gate; and a first memory cell MC0 capturing electrons in the first gate insulating film and writing data by an inversion layer and a depletion layer occurring between the first and second gates, and erasing the data by extracting the electrons from the first gate insulating film to the semiconductor body. |
