| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device that suppresses a carrier overflow and also suppresses diffusion of a p-type impurity to an active layer.SOLUTION: The semiconductor laser device includes a first p-type clad layer provided on an active region layer, and a second p-type clad layer provided on the first p-type clad layer and having a p-type impurity concentration of 1.0×10cmto 2.0×10cm. The concentration of the p-type impurity abruptly drops to 5.0×10cmor lower in a region which is 20 to 40 nm distant from a surface of a second light guide layer positioned on a quantum well layer side in the active region layer toward the first p-type clad layer. Preferably, a p-type impurity concentration on a surface of the first p-type clad layer positioned on the active region layer side is 1×10cmor less. Further, it is preferred that a p-type impurity concentration on the surface of the first p-type clad layer positioned on a second p-type clad layer side is equal to the p-type impurity concentration of the second p-type clad layer. |
