发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device includes providing a substrate having a first gate structure and a second gate structure formed thereon; blanketly forming a seal layer covering the first gate structure and the second gate structure on the substrate; performing a first ion implantation to form first light-doped drains (LDDs) in the substrate respectively at two sides of the first gate structure; and performing a second ion implantation to form second LDDs in the substrate respectively at two sides of the second gate structure; wherein at least one of the first ion implantation and the second ion implantation is performed to penetrate through the seal layer.
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申请公布号 |
US2013171789(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201213342993 |
申请日期 |
2012.01.04 |
申请人 |
CHOU LING-CHUN;HUANG SHIN-CHUAN;WANG I-CHANG;HUNG CHING-WEN;HSU BUO-CHIN;YE YI-HAN |
发明人 |
CHOU LING-CHUN;HUANG SHIN-CHUAN;WANG I-CHANG;HUNG CHING-WEN;HSU BUO-CHIN;YE YI-HAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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