GROUP-III NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

Provided is a group-III nitride semiconductor element that has good ohmic contact between a (000-1)-surface side of a group-III nitride semiconductor layer and an electrode and can be operated at a lower voltage. This group-III nitride semiconductor element (100) is characterized by: having a plurality of dome-shaped rounded bumps (124) in a prescribed region (120) of the (000-1)-surface side of the group-III nitride semiconductor layer (110); and having an electrode (128) on the top surface of said region (120).