High energy density reversible electrical energy storage structure for vehicle, has P-type and N-type semiconductors which are penetrated with each other in form of complementary and electrically conductive coherent network

摘要

The storage structure has two metallic conducting current leads which are made of P-type semiconductor (2) and N-type semiconductor (3) respectively. The semiconductors are located together in close contact to accumulate mobile charge carriers of semiconductors. An isolating depletion zone is formed between semiconductors, such that charge equalization between semiconductors is prevented. The semiconductors are penetrated with each other in form of complementary and electrically conductive coherent network. A surge arrester (4) of dense layer is provided in N-type semiconductor.