发明名称 |
GAS INJECTING DEVICE AND SUBSTRATE PROCESSING APPARATUS HAVING THE SAME |
摘要 |
PURPOSE: A gas spray device and a substrate processing apparatus including the same are provided to improve the quality of a thin film by reducing or suppressing an undesirable chemical vapor reaction. CONSTITUTION: A top lid (122) includes a plurality of gas inlets (124S,124P,124R) to which process gases are supplied. A central spray unit (131) is combined with the lower center of the top lid. One or more lateral nozzles (134) which laterally sprays the gas are formed in the central spray unit. A process gas spray unit (126) is combined with the lower part of the top lid along the edge of the central spray unit in a circumferential direction. A plurality of gas spray holes (132) connected to one of the gas inlets are formed on the lower side of the process gas spray unit.
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申请公布号 |
KR20130074420(A) |
申请公布日期 |
2013.07.04 |
申请号 |
KR20110142479 |
申请日期 |
2011.12.26 |
申请人 |
WONIK IPS CO., LTD. |
发明人 |
YOON, TAE HO;KIM, YONG JIN;LA, DOO HYUN;CHO, BYUNG CHUL;HEO, PIL WUNG;HWANG, HUI |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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