| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering apparatus and a sputtering method capable of stably forming a film in a transition region.SOLUTION: A sputtering gas and a reactive gas are introduced into a vacuum chamber 11 while their flow rates is controlled, and a plasma is generated by applying voltages to targets 15a and 15b. In order to carry out sputtering in a transition region, the light intensity of an emitted light from the generated plasma is measured, and the flow rate of the introduced reactive gas is increased or decreased so that exposed areas of the surfaces of the targets 15a and 15b maintain exposed areas in the transition region. In that case, condensers 51a and 51b condensing the emitted light are moved together with magnet devices 30a and 30b so that the light intensity measurement is prevented from receiving influence of the magnet movement. |
