发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, which can prevent cracks of a wafer in manufacturing processes.SOLUTION: A semiconductor device manufacturing method of a present embodiment comprises: a step (S11) of preparing a laminate having a structure in which two wafers are soldered and laminated via an impurity supply source layer, and the two wafers are welded via the impurity supply source layer; a step (S12) of performing a processing treatment on each principal surface of the two wafers composing the laminate; and a step (S13) of detaching the two wafers which have been subjected to the processing treatment. |
申请公布号 |
JP2013131611(A) |
申请公布日期 |
2013.07.04 |
申请号 |
JP20110279763 |
申请日期 |
2011.12.21 |
申请人 |
SHINDENGEN ELECTRIC MFG CO LTD |
发明人 |
YANAGIBASHI TOSHIKO |
分类号 |
H01L21/329;H01L21/225;H01L29/861;H01L29/868 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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