发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, which can prevent cracks of a wafer in manufacturing processes.SOLUTION: A semiconductor device manufacturing method of a present embodiment comprises: a step (S11) of preparing a laminate having a structure in which two wafers are soldered and laminated via an impurity supply source layer, and the two wafers are welded via the impurity supply source layer; a step (S12) of performing a processing treatment on each principal surface of the two wafers composing the laminate; and a step (S13) of detaching the two wafers which have been subjected to the processing treatment.
申请公布号 JP2013131611(A) 申请公布日期 2013.07.04
申请号 JP20110279763 申请日期 2011.12.21
申请人 SHINDENGEN ELECTRIC MFG CO LTD 发明人 YANAGIBASHI TOSHIKO
分类号 H01L21/329;H01L21/225;H01L29/861;H01L29/868 主分类号 H01L21/329
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