MAGNETIC RESISTANCE ELEMENT, SEMICONDUCTOR MEMORY, AND SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a magnetic resistance element whose characteristics are not deteriorated even by heat treatment at a high temperature.SOLUTION: A magnetic resistance element has: a free layer arranged on a semiconductor substrate; a tunnel insulating film arranged on the free layer; a fixed layer arranged on the tunnel insulating film, and including first and second magnetic layers opposed to each other while interposing an Ru film therebetween; and an antiferromagnetic layer arranged on the fixed layer, and formed by PtMn. Thickness of the Ru film is 1.5 nm or more and 1.7 nm or less.