发明名称 THIN FILM FORMING METHOD AND THIN FILM FORMING DEVICE
摘要 PROBLEM TO BE SOLVED: To form a thin film with high film thickness accuracy on a long base material continuously at high speed by narrowing a clearance between a die and the base material without affecting the running of the base material.SOLUTION: There is provided the thin film forming method in which the thin film is formed on the surface of the long base material using a coating die having a cavity arranged opposite to one surface of the long base material with a predetermined interval between them while continuously transporting the long base material. In the method, the coating die includes: a tapered part forming the cavity and coming close to each other toward the downstream in the running direction of the base material; and a bypass passage communicating the upstream side and the downstream side of the cavity with each other. The thin film is formed on the surface of the long base material by controlling the load given to the coating die in a direction toward the base material to keep a repulsion against the coating die which is generated by a pressure generated in the cavity and adjusted by a flow rate adjusting means provided in the bypass passage while supplying a material solution with a predetermined pressure to the cavity of the coating die.
申请公布号 JP2013128928(A) 申请公布日期 2013.07.04
申请号 JP20130034138 申请日期 2013.02.25
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 ORITA NOBUAKI;KOAIZAWA HISASHI
分类号 B05D1/26;B05C5/02 主分类号 B05D1/26
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