| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which a cavity part is prevented from being destroyed and reliability of connection between substrates can be improved, the semiconductor device and an electronic device.SOLUTION: A semiconductor chip 10 comprises a first base material 1, a sacrificial layer which is provided at a side of a front face 1a of the first substrate 1, a through electrode 20, a first TSV insulating film 27 which is positioned between the through electrode 20 and the first base material 1, and a second TSV insulating film 28 which is provided in such a manner that the first TSV insulating film 27 is not exposed at the side of a rear face 1b. A base substrate 50 includes a second base material 51 and a bump 60 provided at the side of the semiconductor chip 10 of the second base material 51. A manufacturing method includes a mounting step of connecting the through electrode 20 and the bump 60 while confronting the rear face 1b and the front face 1a, and an etching step of forming a cavity part 31 at the side of the front face 1a of the first base material 1 by etching the sacrificial layer after the mounting step. |
