发明名称 |
METHOD FOR FABRICATING AN ISOLATION STRUCTURE |
摘要 |
A method of fabricating an isolation structure including forming a trench in a top surface of a substrate and partially filling the trench with a first oxide, wherein the first oxide is a pure oxide. Partially filling the trench includes forming a liner layer in the trench and forming the first oxide over the liner layer using silane and oxygen precursors at a pressure less than 10 milliTorr (mTorr) and a temperature ranging from about 500° C. to about 1000° C. The method further includes producing a solid reaction product in a top portion of the first oxide. The method further includes sublimating the solid reaction product by heating the substrate in a chamber at a temperature from 100° C. to 200° C. and removing the sublimated solid reaction product by flowing a carrier gas over the substrate. The method further includes filling the trench with a second oxide.
|
申请公布号 |
US2013171803(A1) |
申请公布日期 |
2013.07.04 |
申请号 |
US201313775907 |
申请日期 |
2013.02.25 |
申请人 |
LEE TZE-LIANG;JENG PEI-REN;FU CHU-YUN;CHERN CHYI SHYUAN;HUANG JUI-HEI;PENG CHIH-TANG;LIEN HAO-MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE TZE-LIANG;JENG PEI-REN;FU CHU-YUN;CHERN CHYI SHYUAN;HUANG JUI-HEI;PENG CHIH-TANG;LIEN HAO-MING |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|